1n53 38 b thru 1n53 88 b 5 watt zener diode 5.1 to 200 volts features x zener voltage from 5.1v to 200 v x operating temperature: -55 q c to +150 q c x storage temperature: -55 q c to +150 q c x 5 watt dc power dissipation x maximum forward voltage @ 1a: 1.2 volts x po we r d e r a t i n g: 67 m w/ : ab o v e 7 5 : mechanical data case: jedec do- 15. t e rmi n al s : s o ld e r pl a t e d , so lde r a b le p e r mil-st d - 7 5 0, method 2026. standard packaging: 52mm tape do-15 a b c d d cathode mark dimensions inches mm dim min max min max note a .230 .300 5.80 7.60 b .104 .140 2.60 3.60 c .026 .034 .70 .90 d 1.000 --- 25.40 --- ? marking : cathode band and type number x maximum thermal resistence: 25c/w from junction to ambient maximum ratings: ? lead free finish/rohs compliant (note1) ("p"suffix designates compliant. see ordering information) note: 1. high temperature solder exemption applied, see eu directive annex 7. epoxy meets ul 94 v-0 flammability rating moisture sensitivity level 1 ? h alogen free available upon request by adding suffix "-hf" ki semiconductor ki semiconductor
1 n 53 3 8b t h ru 1 n 5 3 88 b electrical characteristics ( t a =25 unless otherwise noted, v f =1.2 max @ i f = 1 a f o r a ll t y p es ) note: 1. tolerance and voltage designation - the jedec type numbers shown indicate a tolerance of+/-10% with gua r anteed l i m i ts on on l y v z , i r , i r , and v f as s ho w n i n t he e l e c t r i c al c ha r a c te r i s t i c s t ab l e. u n i t s w i t h g ua r anteed l i m i ts on a l l s e v en pa r a m ete r s a r e i nd i c ated by s u f f i x ? b ? fo r +/-5% t o l e r an c e. 2. zener voltage (vz) and impedance (z zt &z zk ) - test conditions for zener voltage and impedance are as follows; iz is applied 40+/-10 ms prior to reading. mounting contacts are located from the inside edge of mounting c l i ps t o t he body of the diode(ta=25 o c ) q c regulator voltage vz test current iz maximum dynamic impedance zzt maximum reverse current ir test voltage vr maximum regulator current izm maximum dynamic knee impedance zzk@1.0ma maximum surge current izsm maximum voltage regulation volts ma ohms a volts ma ohms a volts 1n5338b 5.1 240 1.5 1 1 930 400 14.4 0.39 1n5339b 5.6 220 1 1 2 865 400 13.4 0.25 1n5340b 6 200 1 1 3 790 300 12.7 0.19 1n5341b 6.2 200 1 1 3 765 200 12.4 0.1 1n5342b 6.8 175 1 10 5.2 700 200 11.5 0.15 1n5343 b 7. 5 17 5 1. 5 1 0 5. 7 63 0 20 0 10. 1n5344b 8.2 150 1.5 10 6.2 580 200 10 0.2 1n5345b 8.7 150 2 10 6.6 545 200 9.5 0.2 1n5346b 9.1 150 2 7.5 6.9 520 150 9.2 0.22 1n5347b 10 125 2 5 7.6 475 125 8.6 0.22 1n5348b 11 125 2.5 5 8.4 430 125 8 0.25 1n5349b 12 100 2.5 2 9.1 395 125 7.5 0.25 1n5350b 13 100 2.5 1 9.9 365 100 7 0.25 1n5351b 14 100 2.5 1 10.6 340 75 6.7 0.25 1n5352b 15 75 2.5 1 11.5 315 75 6.3 0.25 1n5353b 16 75 2.5 1 12.2 295 75 6 0.3 1n5354b 17 70 2.5 0.5 12.9 280 75 5.8 0.35 1n5355b 18 65 2.5 0.5 13.7 264 75 5.5 0.4 1n5356b 19 65 3 0.5 14.4 250 75 5.3 0.4 1n5357b 20 65 3 0.5 15.2 237 75 5.1 0.4 1n5358b 22 50 3.5 0.5 16.7 216 75 4.7 0.45 1n5359b 24 50 3.5 0.5 18.2 198 100 4.4 0.55 1n5360b 25 50 4 0.5 19 190 110 4.3 0.55 1n5361b 27 50 5 0.5 20.6 176 120 4.1 0.6 1n5362b 28 50 6 0.5 21.2 170 130 3.9 0.6 1n5363b 30 40 8 0.5 22.8 158 140 3.7 0.6 1n5364b 33 40 10 0.5 25.1 144 150 3.5 0.6 1n5365b 36 30 11 0.5 27.4 132 160 3.3 0.65 1n5366b 39 30 14 0.5 29.7 122 170 3.1 0.65 1n5367b 43 30 20 0.5 32.7 110 190 2.8 0.7 1n5368b 47 25 25 0.5 35.8 100 210 2.7 0.8 1n5369b 51 25 27 0.5 38.8 93 230 2.5 0.9 1n5370b 56 20 35 0.5 42.6 86 280 2.3 1 1n5371b 60 20 40 0.5 45.5 79 350 2.2 1.2 1n5372b 62 20 42 0.5 47.1 76 400 2.1 1.35 1n5373b 68 20 44 0.5 51.7 70 500 2 1.5 1n5374b 75 20 45 0.5 56 63 620 1.9 1.6 1n5375b 82 15 65 0.5 62.2 58 720 1.8 1.8 1n5376b 87 15 75 0.5 66 54.5 760 1.7 2 1n5377b 91 15 75 0.5 69.2 52.5 760 1.6 2.2 1n5378b 100 12 90 0.5 76 47.5 800 1.5 2.3 1n5379b 110 12 125 0.5 83.6 43 1000 1.4 2.5 1n5380b 120 10 170 0.5 91.2 39.5 1150 1.3 2.5 1n5381b 130 10 190 0.5 98.8 36.6 1250 1.2 2.5 1n5382b 140 8 230 0.5 106 34 1500 1.2 2.5 1n5383b 150 8 330 0.5 114 31.6 1500 1.1 3 1n5384b 160 8 350 0.5 122 29.4 1650 1.1 3 1n5385b 170 8 380 0.5 129 28 1750 1 3 1N5386B 180 5 430 0.5 137 26.4 1750 1 4 1n5387b 190 5 450 0.5 144 25 1850 0.9 5 1n5388b 200 5 480 0.5 152 23.6 1850 0.9 5 mcc part number ki semiconductor
3. surge current (ir) - surge current is specified as t he maximum allowable peak, non-recurrent square-wave current with a pulse width, pw, of 8.3 ms. the data given in figure 5 may be used to find the maximum surge current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on l oga r i t hm i c pape r . e x amp l es of th i s , u s i ng the 6.8v , is s ho w n i n f i g u r e 6. m ount i ng contact located as specified in note 3. (t a =25 ). 4. voltage regulation (vz) - test conditions for voltage regulation are as follows: vz measurements are made at 10% and then at 50% of the iz max value listed in the electrical characteristics table. the test currents are the same for the 5% and 10% tolerance devices. the test current time druation for each vz measurement is 40+/- 10 ms. (t a =25c ). mounting contact located as specified in note2. 5. maximum regulator current (i zm ) - the maximum current shown is based on the maximum voltage of a 5% type unit. therefore, it applies only to the b-suffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual vz of the device. t l =75cat maximum from the device body. a p p l i c a t i o n n o t e: 1 n 53 3 8b t h ru 1 n 5 3 88 b since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = la p d + t a la is the lead\to\ambient thermal resistance and p d is the power dissipation. junction temperature, t j , may be found from: t j = t l + t jl t jl is the increase in junction temperature above the lead temperature and may be found from figure 4 for a train of power pulses or from figure 1 for dc power. t jl = jl p d for worst\case design, using expected limits of i z , limits of p d and the extremes of t j ( t j ) may be estimated. changes in voltage, v z , can then be found from: v = vz t j vz , the zener voltage temperature coefficient, is found from figures 2 and 3. under high power\pulse operation, the zener voltage will vary with t ime and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 4 should not be used to compute surge capability. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding ef fects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 5 be exceeded. ki semiconductor
rating and characteristics curves 1 n 533 8 b t hr u 1 n 53 88 b temperature coefficients 8 6 4 2 0 0 20 40 60 80 100 120 tl, lead temperature 300 200 100 50 30 20 10 5 0 20 40 60 80 100 120 140 160 180 200 22 0 range vz, zener voltage @ izt ( volts ) fig. 1-power temperature derating curve fig. 2-temperature coefficient-range for units 6to51volts 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 m o unt on 8.0mm copper pads to each terminal l, lead length to heat sink ( inch ) 40 20 10 4 2 1 0.4 0.2 0.1 3 4 6 8 10 20 30 40 60 80 100 200 pw = 1ms* pw = 8.3ms* pw = 1000ms* sine / square wave pw = 100ms* nominal vz ( v ) fig. 4-typical thermal resistance fig. 5-maximum non-repetitive surge current versus nominal zener voltage (see note 3) pd, maxiumu power dissipation (watts) jl, junction-to -lead thermal resistance ( c /w) ir, peak surge current (amps) 2 v z , temperature coefficient (mv/ c) @ i zt jl (t, d), transient thermal resistance junction\to\lead ( c/w) 20 10 5 2 1 0.5 0.2 0.001 0.005 0.01 0.05 0.1 0.5 1 5 10 20 50 100 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.01 d = 0 note: below 0.1 second, thermal note: response curve is applicable note: to any lead length (l). duty cycle, d = t 1 /t 2 single pulse t jl = jl (t)p pk repetitive pulses t jl = jl (t, d)p pk p pk t 1 t 2 t, time (seconds) figur e 3 . t ypical thermal response l, lead length = 3/8 inch ki semiconductor
rating and characteristics curves 1 n 533 8 b t hr u 1 n 53 88 b zener voltage versus zener current (figures 7,8) 30 20 10 5 2 1 0.5 0.2 0.1 1 10 100 1000 vz = 6.8v plotted from information g i ve n i n f i g u r e 5 1000 100 10 1 0.1 12345678910 t=25 t c =25 vz , zener voltage ( volts ) fig. 6-peak surge current versus pulse width(see note 3) fig. 7-zener voltage versus zener current vz = 6.8 thru 10 volts 1000 100 10 1 0.1 10 20 30 40 50 60 70 80 t=25 vz, zener voltage ( volts ) fig. 8-zener voltage versus zener current vz = 11 thru 51 volts *** data of figure 3 should not be used to compute surge capability. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure. 5 be exceeded iz, zener current (ma) iz, zener current (ma) i r , peak surge current (amps) ki semiconductor
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